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| 2SD2122(L)/(S), 2SD2123(L)/(S) Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB1409(L)/(S) Outline DPAK 4 4 1 2 3 12 S Type 3 1. Base 2. Collector 3. Emitter 4. Collector L Type 2SD2122(L)/(S), 2SD2123(L)/(S) Absolute Maximum Ratings (Ta = 25C) Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25C. Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg 1 2SD2122(L)/(S) 2SD2123(L)/(S) Unit 180 120 5 1.5 3 18 150 -55 to +150 180 160 5 1.5 3 18 150 -55 to +150 V V V A A W C C Electrical Characteristics (Ta = 25C) 2SD2122(L)/(S) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO 2 2SD2123(L)/(S) Min 180 160 5 -- 60 30 -- -- -- -- Typ -- -- -- -- -- -- -- -- 180 14 Max -- -- -- 10 200 -- 1 1.5 -- -- V V MHz pF Unit V V V A A Test conditions I C = 1 mA, IE = 0 I C = 10 mA, RBE = I E = 1 mA, IC = 0 VCB = 160 V, IE = 0 VCE = 5 V, IC = 150 mA*1 VCE = 5 V, IC = 500 mA*1 I C = 500 mA, I B = 50 mA*1 VCE = 5 V, IC = 150 mA*1 VCE = 5 V, IC = 150 mA*1 VCB = 10 V, IE = 0, f = 1 MHz Min 180 120 5 -- 60 30 -- -- -- -- Typ -- -- -- -- -- -- -- -- 180 14 Max -- -- -- 10 200 -- 1 1.5 -- -- DC current transfer ratio hFE1* hFE2 Collector to emitter saturation voltage VCE(sat) Base to emitter voltage VBE Gain bandwidth product f T Collector output capacitance Cob Notes: 1. Pulse test 2. The 2SD2122(L)/(S) and 2SD2123(L)/(S) are grouped by h FE1 as follows. B 60 to 120 C 100 to 200 2 2SD2122(L)/(S), 2SD2123(L)/(S) Maximum Collector Dissipation Curve 30 Collector power dissipation Pc (W) 10 3.0 1.0 0.3 0.1 0.03 0.01 0 50 100 Case temperature TC (C) 150 3 2SD2122 10 30 100 300 Collector to emitter voltage VCE (V) 2SD2123 Area of Safe Operation Collector current IC (A) IC (max) 20 on ati er ) Op 25C DC = (T C 10 Typical Output Characteristics 1.0 10 98 7 6 5 4 3 0.4 2 0.2 1 mA IB = 0 0 TC = 25C P C DC Current Transfer Ratio vs. Collector Current 1,000 DC current transfer ratio hFE VCE = 5 V Ta = 25C 300 Collector current IC (A) 0.8 = 0.6 18 W 100 30 10 20 30 40 50 Collector to emitter voltage VCE (V) 10 0.03 0.1 0.3 1.0 Collector current IC (A) 3.0 3 2SD2122(L)/(S), 2SD2123(L)/(S) Collector to emitter saturation voltage VCE (sat) (V) Base to emitter saturation voltage VBE (sat) (V) Saturation Voltage vs. Collector Current 1.0 Saturation Voltage vs. Collector Current 10 0.3 3.0 0.1 1.0 0.03 Ta = 25C lC = 10 lB 0.01 0.03 0.1 0.3 1.0 Collector current IC (A) 3.0 0.3 Ta = 25C lC = 10 lB 0.1 0.03 0.1 0.3 1.0 Collector current IC (A) 3.0 Typical Transfer Characteristics 2.0 Gain bandwidth product fT (MHz) 1,000 Gain Bandwidth Product vs. Collector Current Collector current IC (A) 1.6 300 1.2 100 0.8 0.4 VCE = 5 V Ta = 25C 0 0.4 0.8 1.2 1.6 Base to emitter voltage VBE (V) 2.0 30 VCE = 5 V Ta = 25C 0.03 0.1 0.3 Collector current IC (A) 1.0 10 0.01 4 2SD2122(L)/(S), 2SD2123(L)/(S) Collector Output Capacitance vs. Collector to Base Voltage Collector output capacitance Cob (pF) 100 30 10 3 f = 1 MHz IE = 0 Ta = 25C 1 3 10 30 100 Collector to base voltage VCB (V) 1 5 Unit: mm 6.5 0.5 5.4 0.5 1.7 0.5 2.3 0.2 0.55 0.1 5.5 0.5 1.2 0.3 3.1 0.5 1.15 0.1 0.8 0.1 16.2 0.5 2.29 0.5 2.29 0.5 0.55 0.1 Hitachi Code JEDEC EIAJ Weight (reference value) DPAK (L)-(1) -- Conforms 0.42 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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